On the Effect of Non-degenerate Doping of Polysilicon Gate in Thin Oxide Mos-devices-analytical Modeling
نویسنده
چکیده
A one-dimensional model of the polysilicon-gate-oxide-bulk structure is presented in order to analyze the implanted gate MOS-devices. The influence of the ionized impurity concentration in the polysilicon-gate near the oxide and the charge at the polysilicon-oxide interface on the flat-band voltage, threshold voltage, inversion layer charge and the quasi-static C-V characteristic is quantitatively studied. The calculations show a considerable degradation of the inversion layer charge due to the voltage drop in the gate, especially in thin oxide devices. The calculated quasi-static C-Vcurves agree with the recently published data of implanted gate devices.
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